| 摘要 |
PURPOSE:To improve the controllability both in the thickness of an oxide film and the depth of impurity diffusion conducted by annealing by a method wherein the temperature of one place on a wafer is measured with time, and the result of the conversion processing conducted using a function is integrated with time. CONSTITUTION:A gas composition measurement is conducted with time by the inflared-ray thermometer 16 of a temperature measurement and gas analytical device from the beginning of a heat treatment, and the result of said measurement is sent to the function processing device 19 in a control device 18. At this point, when the object of control is the thickness of an SiO2 film, the thickness attained each hour is computed using a specific function formula, for example. Whether the SiO2 film thickness reached the desired thickness is judged by a judgement device 112. When the desired thickness is achieved, gas is stopped by operating a gas flow rate control device 15 or the power source 13 of a halogen lamp is turned off, and the accurate SiO2 film thickness is obtained. As a result, the controllability both in the thickness of oxide film and the depth of impurity diffusion obtained by an annealing can be improved.
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