| 摘要 |
PURPOSE:To suppress generation of a non-joint part to be caused by a DBC method at the time of joining to the minimum, by directly joining a copper circuit plate to the copper thin film layer of the ceramic substrate, wherein the copper thin film layer is formed on the surface by heating in advance. CONSTITUTION:A copper circuit plate 3 is directly joined on the copper thin film layer 2 of the ceramic substrate 1, on whose surface the copper thin film layer 2 is in advance formed, by heating. The copper thin film layer 2 is formed by a non-electrolysis plating method or a physical evaporation method, the thickness of the thin film layer 2 being suitably within the range of 0.01-10mum. For instance, a copper plating layer 2 having the thickness of about 2 mum is formed on both surfaces of the ceramic substrate 1 mainly composed of alumina. Next, the copper circuit plate 3 having the thickness of 0.03mum of tough-pitch copper having an oxygen content of 300ppm is arranged in the fixed position of the copper plating layer 2 formed on both surfaces of the ceramics substrate 1 for being given heat treatment in a nitrogen gas atmosphere at 1070 deg.C for ten min to join both of them so as to manufacture a ceramic circuit substrate.
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