| 摘要 |
PURPOSE:To make it possible to adjust the angle in H-direction in addition to the angle adjustment in the directions of X and Y by a method wherein an ingot is rotated around the axis of the ingot. CONSTITUTION:The first mounting jig 3 and the second mounting jig 4, both of which can be rotated around axis respectively, are attached to a mounting block 10. A semiconductor single crystal ingot 1 is fixed to the end face of the jig 3 by a spacer 2. The block 10 can be rotated in vertical direction around a horizontal axis 11. The rotating angle Y is 0-600 deg., for example. The rotary base stand 12 can be rotated in horizontal direction around a vertical line 13. The rotating angle X is -Xm-+Xm, and Xm is 7 deg. or thereabout. The axis (h) of the ingot 1 when x=0 and Y=0 is regarded as the reference horizontal line (l). The cut surface SIGMA of the inner circumferential blade is set in such a manner that it becomes at right angle to the horizontal line (l). As a result, the angle adjustment in H-direction can be made possible in addition to the angle adjustment in X and Y directions. |
