| 摘要 |
PURPOSE:To make it possible to manufacture a III-V compound semiconductor optical guide element having an arbitrary fine embedded structure only with one crystalline growth by a method wherein a stripe-shaped projecting section having a vertical sidewall with a specific plane orientation is formed on the surface of a specific plane orientation of substrate, and an optical guide layer and a clad layer is epitaxially grown on it. CONSTITUTION:A stripe-shaped projecting section having a vertical sidewall with plane orientation equivalent to the crystallographical plane orientation a face 01-1 and a face 0-11 or the face 01-1 and the face 0-11 is formed on the crystallographical plane orientation, a face 100 or a plane equivalent to the face 100 on a substrate 1 mainly consisting of III-V compound. Then, in a vapor phase or vacuum, at least, a crystalline layer mainly consisting of III-V compound to be an optical guide layer 3 and a crystalline layer mainly consisting of III-V compound to be a clad layers 2, 3 are epitaxially grown on the said plane. For example, after said stripe is formed on an n-type 100 plane GaAs substrate crystal 1, an n-AlGaAs lower clad layer 2, the GaAs optical guide layer 3, and the p-AlGaAs upper clad layer 4 are formed.
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