发明名称 |
Semiconductor laser having superlattice structure |
摘要 |
There is disclosed a semiconductor laser having a super lattice structure near an active layer, in which the super lattice structure consists of at least two types of materials which have different bandgaps, the materials are regularly and alternately arranged, and thickness of adjacent layers of the materials change such that a ratio of the thicknesses changes within the super lattice structure toward an active layer.
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申请公布号 |
US4794611(A) |
申请公布日期 |
1988.12.27 |
申请号 |
US19850809770 |
申请日期 |
1985.12.17 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
HARA, TOSHITAMI;SEKIGUCHI, YOSHINOBU;MIYAZAWA, SEIICHI;NOJIRI, HIDETOSHI;SHIMIZU, AKIRA;HAKAMADA, ISAO |
分类号 |
H01S5/00;H01S5/20;H01S5/32;H01S5/34;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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