| 摘要 |
PURPOSE:To dispense with an ion beam irradiation so as to improve a manufacturing yield by a method wherein a semiconductor laser is provided with an active layer of a quantum well structure and a means which applies a magnetic field in the direction of thickness of the active layer. CONSTITUTION:A first clad layer 2 is laid on the primary surface of an n-type GaAs substrate 1 and an active layer 3 is formed on the almost central part thereof. A second clad layer 4 and a carrier layer 5 are laid on the active layer 3, then an ohmic electrode 8 is built thereon. An insulating layer 7 is coated on. A superconducting ring 10 is formed on the insulating layer 7 so as to surround the ohmic electrode 8 and a magnet field is applied in the thick- wise direction of the active layer 3. A carrier in the active layer 3 is three- dimensionally quantized through a quantum well structure and the magnetic field applied in the thick-wise direction.
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