| 摘要 |
PURPOSE:To grow a thin film crystal with less surface faults at a lower temp. than before by allowing the raw gas molecule to collide with the surface of a semiconductor or a dielectric body with the kinetic energy higher than the band gap energy of the materials with the use of a supersonic molecular beam. CONSTITUTION:When the thin film crystal of GaAs is to be obtained, a GaAs substrate 12 is mounted in a holder 13 in a high-vacuum growth chamber 11. GaCl3 and H2 as the Ga-growth materials are sent to the substrate 12 as the supersonic molecular beam 20 of the gaseous mixture through a supersonic molecular beam generating chamber 18 as the As-growth material is supplied from a cylinder 21. The temp. of a GaCl3 cylinder 15, the secondary pressure of an H2 cylinder 24, and the secondary pressure of the cylinder 21 are then adjusted so that the intensities of the molecular beams 20 of both GaCl3 and AsH3 are controlled to specified values on the substrate 12. In this case, the kinetic energy of both materials is made higher than the band gap energy of GaAs to promote the dissociation and adsorption of GaCl3 and AsH3 on the substrate 12, and the thin film crystal of GaAs with less surface faults is obtained at a lower temp. than before.
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