| 摘要 |
PURPOSE:To obtain a high-output double step multi-quantum well-type embedded semiconductor laser capable of operating independently and with superior temperature and spectrum characteristics by a method wherein the first polarity electrode of a specific laser with a double step and double hetero structure is formed on the striped section on the upper plane and the rear, and the second polarity electrode is formed in a specific striped-shape. CONSTITUTION:A specific double hetero structures 2-5 including the first active layer 4 with a superlattice structure are provided on a p<+>-type GaAs substrate 1, and a Ga ion beam is implanted into the whole surface from a cap layer 6 on it except for a striped region to disorder the superlattice structure. Further, specified double hetero structures 8-11 including the second active layer 10 with a superlattice structure are provided on it, and Zn is diffused from the cap layer 12 on it to disorder the superlattice structure, at least, to the second active layer 10 except for the striped layer. In such semiconductor laser, the first polarity electrodes 15, 16 are formed on the striped section on the upper plane and on the rear plane, and the second polarity electrode 14 is formed in a stripe shape parallel to the upper plane electrode 15 out of the first polarity electrodes and extending to the gap layer 6.
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