| 摘要 |
PURPOSE:To accelerate the operation speed of a FET by a method wherein, at the time of the epitaxial growth of a semiconductor layer to be selectively doped, the surface of a substrate is irradiated with light simultaneously with the start of feeding the impurity material to rapidly increase the concentration of the impurities at the interface between the selectively doped layer and an undoped layer, with increased concentration of two-dimensional electron gas. CONSTITUTION:At the time of the epitaxial growth of a semiconductor layer to be selectively doped, the surface of a substrate is irradiated with light simultaneously with the start of feeding the impurity material. For example, when an AlGaAs/GaAs system HEMT structure is epitaxially grown with organic metal thermal decomposition vapor phase method, and with Al(CH3)3, Ga(CH3)3, AsH3 as the source material for Al, Ga, As; Si(CH3)4 as n-type impurity material; and H2 as a carrier gas, an undoped GaAs layer 2 and a non-doped AlxGa1-xAs layer 3 are grown on a semiconductive GaAs substrate 1. In addition to the source material of Al, Ga, and As, the surface of the substrate is irradiated with ArF excimer laser ray 5 simultaneously with the start of feeding n-type impurity material to grow an n-type AlxGa1-xAs layer 4.
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