| 摘要 |
PURPOSE:To prevent a disconnection from occurring to a slanting part by a method wherein thin films such as Al, etc., are deposited by sputtering process improving the adhesion to the slanting part by applying bias potential or thermal energy at least in one term during the depositing process. CONSTITUTION:For examples, a silicon oxide film and a silicon nitride film are used respectively for a primer insulating film 2 and a surface protecting film 7. Since Al alloy thin film wirings 4 are made of thin film deposited by sputtering process improving the adhesion to a slanting part no disconnection occurs even in a part on the surface of a substrate having a steep inclination such as a contact hole 8. Furthermore, the Al alloy thin film wirings 4 being coated with W thin film 6 in high mechanical strength, the stress imposed on the wirings 4 themselves can be alleviated, e.g. even if a fine disconnection occurs in the Al alloy thin film wirings 4, overall wirings 4 are not subjected to the disconnection at all since the conductivity thereof can be maintained by the W thin film 6.
|
