| 摘要 |
PURPOSE:To increase the yield by arranging a cooling part and a heat reflecting plate so as to rapidly cool a part of a pulled single crystal cooled to a prescribed temp. or below and to moderate the temp. distribution of a region near the solid-liq. interface between the single crystal and a melt. CONSTITUTION:This furnace for pulling and growing a silicon single crystal is provided with a cooling part (cooling water) 6a and a heat reflecting plate 6b. A silicon single crystal 5 is pulled from molten silicon 3 in a quartz crucible 2 and a part of the pulled crystal 5 cooled to <=1,000 deg.C is rapidly cooled in the cooling part 6a. The heat reflecting plate 6b moderates the temp. distribution of a region near the solid-liq. interface between the crystal 5 and the molten silicon 5.
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