| 摘要 |
PURPOSE:To improve a residual image characteristic of a solid-state image sensing device and to enable the solid-state image sensing device to be manufactured stably, by completely depleting a group of optoelectric transducers with a voltage for reading an optical signal from a group of CCD shift resisters for vertical scanning, and by making a potential-well in the optoelectric transducer gradually more deeper toward the reading side. CONSTITUTION:A group of optoelectric transducers are so designed as to be depleted completely with a voltage for reading an optical signal from a group of CCD-shift resisters, and each of potential-wells therein so as to be gradually more deeper toward the reading side. For example, in order to obtain a structure such as illustrated, boron ions are first selectively implanted into the area of a p-type silicon substrate 1 indicated by an arrow A, which has a strip-like pattern with a width less than 2mum, to form a p-type area 2 which has a distribution profile being nearly a concentric semicircle. Next, a suitable drive-in treatment is so performed, if necessary, in consideration of the heat history up to the final process, that the diffusion length of the p-type area 2 extends to the middle of an n-type area 3 to be a photodiode which is formed in the next process. After the n-type area 3 is formed in the manner as above- mentioned and a buried layer 4 for CCD is formed, an electrode 5 for CCD is formed.
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