发明名称 Semiconductor laser device
摘要 A semiconductor laser device of a new monolithic structure has a long transparent optical waveguide used as a passive cavity directly coupled with an active cavity possessing a gain in the direction of the optical axis of the active cavity on a compound semiconductor substrate. The device is intended to satisfy all four characteristics, which are; (1) stable single longitudinal mode oscillation; (2) narrow spectral linewidth; (3) suppression of wavelength chirping due to current modulation; and (4) low noise and to be applied as a light source for optical fiber communication, optical information processing or the like.
申请公布号 US4794608(A) 申请公布日期 1988.12.27
申请号 US19850708848 申请日期 1985.03.05
申请人 MATSUSHITA ELECTRIC INDUCTRIAL CO., LTD. 发明人 FUJITA, TOSHIHIRO;OHYA, JUN;MATSUDA, KENICHI;SERIZAWA, HIROYUKI
分类号 H01S5/00;H01S5/026;H01S5/06;H01S5/062;H01S5/0625;H01S5/065;H01S5/10;H01S5/125;H01S5/14;(IPC1-7):H01S3/19 主分类号 H01S5/00
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