发明名称 |
Semiconductor laser device |
摘要 |
A semiconductor laser device of a new monolithic structure has a long transparent optical waveguide used as a passive cavity directly coupled with an active cavity possessing a gain in the direction of the optical axis of the active cavity on a compound semiconductor substrate. The device is intended to satisfy all four characteristics, which are; (1) stable single longitudinal mode oscillation; (2) narrow spectral linewidth; (3) suppression of wavelength chirping due to current modulation; and (4) low noise and to be applied as a light source for optical fiber communication, optical information processing or the like.
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申请公布号 |
US4794608(A) |
申请公布日期 |
1988.12.27 |
申请号 |
US19850708848 |
申请日期 |
1985.03.05 |
申请人 |
MATSUSHITA ELECTRIC INDUCTRIAL CO., LTD. |
发明人 |
FUJITA, TOSHIHIRO;OHYA, JUN;MATSUDA, KENICHI;SERIZAWA, HIROYUKI |
分类号 |
H01S5/00;H01S5/026;H01S5/06;H01S5/062;H01S5/0625;H01S5/065;H01S5/10;H01S5/125;H01S5/14;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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