| 摘要 |
PURPOSE:To deplete a doped layer and thereby to improve a device in characteristics by a method wherein a semiconductor element incorporating amorphous silicon such as a photosensor is provided with a multiplicity of doped multilayered structures consisting of three or more layers. CONSTITUTION:In a photosensor consisting of a glass substrate 1, a transparent conducting film 2, a P-type semiconductor layer 10, an l-type a-Si film 6, an N-type micro-crystal Si film 7, and an Al electrode 8, the P-layer is built of a multiplicity of multilayered structures consisting of an I-type a-SiC thin film 3 and a p-type a-Si thin film 4. In this design, I-type a-Si thin films are inserted into the multilayered structures, which prolongs the life of carriers. As the result, a substantial portion of the carriers generated owing to optical energy absorbed by P-layers may be taken out as an electric current. |
