| 摘要 |
PURPOSE:To reform a surface of composite structure by a combination of CVD, ion implantation, and deposition by approaching a nozzle for supplying a CVD gaseous reactant to the surface of a work, and opposing an evaporator for a deposition material to the surface of the work. CONSTITUTION:The work 1 is fixed to a holder 3 provided in a vacuum vessel 2, and rotated. The CVD gaseous reactant 5 is supplied through the supply nozzle 4 inserted into the vessel 2. A deposition source 10 for supplying the vapor of the raw material is furnished below the work 1. When a CVD film is formed, a gate valve 7 is closed, and the gaseous reactant 5 is supplied to deposit a film on the surface of the work 1. The gate valve 7 is then opened, and an ion is implanted in the work 1 from an ion source 6. As a result, the respective film forming devices of CVD, ion implantation, and deposition are appropriately combined, and the composite film or the composite film layer having many new functions can be formed.
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