| 摘要 |
PURPOSE:To provide high quality Ta2O5 film with less leak current by allowing the film to contain one or more elements such as Ba, Fe, Pb, Sc, Sr, Zn, La, Si. CONSTITUTION:The dielectric film contains one or more of such elements as Ba, Fe, Pb, Sc, Sr, Zn, La, Si and is formed from Ta2O5 containing each element preferably in the range 0.1-10atom%. These elements intrude in lattice defects or educe at the surface of crystal grain boundary to form oxide. This generates insulating property at these defects which might cause leak current, and a Ta2O5 film with less leak current can be accomplished.
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