| 摘要 |
PURPOSE:To measure the high speed electric characteristic of a semiconductor device, by inserting the part exposed from a coaxial cable of a core wire for a probe through a pipe composed of a shielded insulating material one at a time in a movable manner to allow the same to correspond to an electrode to be contacted. CONSTITUTION:A core wire 17 for a probe is covered with an insulating material and the outer periphery thereof is further covered with a shield material to form a coaxial cable having specific characteristic impedance. The chip part exposed from the coaxial cable of the core wire 17 for the probe is passed through each of a plurality of pipes 18 composed of an insulating material fixed between a pair of fixing boards 19, 20 one at a time and the leading end of the core wire 17 for the probe is guided to the position corresponding to each of the electrodes 1 of a semiconductor device 2 being an object to be inspected and the periphery of each of the insulating pipes 18 fixed between a pair of the fixing substrates 19, 20 is covered with a conductive material 21 and the pipes 18 are earthed in common. By this method, since the core wire 17 for the probe is shielded up to the vicinity of the leading end part thereof, the impedance matching of the whole from the probe to an inspection circuit is taken and the disturbance of the wave form of a high speed signal is prevented.
|
