| 摘要 |
PURPOSE:To steadily measure the damage due to irradiation by plasma radiation by a method wherein a semiconductor element having a floating gate is arranged inside a reaction tank of a plasma reaction device. CONSTITUTION:An electrode 3 connected to a high-frequency power supply 2 and a grounded electrode 4 are arranged face to face with each other inside a reaction tank 1; a silicon sheet 5 where a resist film is coated and nonvolatile read-only memory devices EPROM6 having a floating gate structure are mounted on the electrode 4. When ultraviolet rays generated by plasma radiation reach a floating gate, electrons in the gate receive the energy of light quanta of the ultraviolet rays and are transformed into hot electrons having the energy which can also go over an energy barrier of an insulating film coming into contact with the gate. By this setup, an electric charge stored in the floating gate is erased. Accordingly, it is possible to evaluate the strength of the energy of the ultraviolet rays on the basis of an erased amount of the electric charge and to confirm an extent of the damage due to irradiation of a plasma on the basis of the ultraviolet rays of the plasma radiation.
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