| 摘要 |
PURPOSE:To provide a thin-filmy solid substance of high transparency, having each specified optically forbidden band value and electrical conductance, constituted of phosphorus-contg. silicon. CONSTITUTION:The objective thin-filmy solid substance constituted of phosphorus-contg. silicon, with optically forbidden band value of 2.0-2.8 (elec tron volts) and electrical conductance of 100-1,000(siemens/cm). To produce this substance, a mixed gas comprising, as the base, hydrogen silicide(s) such as monosilane and/or disilane and n-type dopant such as phosphine and, if de sired, a diluent gas such as hydrogen is subjected to electrical discharge decom position to form a solid thin film ca. 10-50mu (pref. 1,000-5,000Angstrom ) thick on a substrate consisting of heated single crystal or non-single crystal at a rate of ca. 0.01-300Angstrom /sec followed by heat treatment of this film under specified conditions, thus obtaining the objective thin film having specified characteristics. |
