| 摘要 |
PURPOSE:To easily obtain a quantum thin line or a quantum well box which adequately displays a one-dimensional quantum effect, by utilizing such a phenomenon that production of a two-dimensional carrier/gas layer depends on existence of a cap layer on a carrier supply layer. CONSTITUTION:This device is provided with the following parts: an undoped channel layer(an i-type GaAs channel 32) laminated on a substrate (a semi- insulating GaAs substrate 31), one conductivity type carrier supply layer (an n-type AlGaAs electron supply layer 33), and one conductivity type cap layer (an n<+> type GaAs cap layer 34) which is selectively formed on the layer 33 in order to produce an electron gas layer only on the undoped channel layer just under the layer 33. An electron gas layer made to be much smaller than a width and an area of the cap layer by an action of a depletion layer is thus produced on only the channel layer part just under the cap layer formed selectively on the carrier supply layer. This electron gas layer can be used as a quantum thin line or a quantum well box, and so an excellent semiconductor device can be obtained easily. |
