| 摘要 |
PURPOSE:To obtain a reference voltage with high voltage accuracy and a wide operating range and to reduce a current being permitted to flow on a substrate, by forming a circuit by using two MOSFETs. CONSTITUTION:A resistor 5 which keeps potential difference between the source and the drain of a first MOSFET4 constant is connected to the connecting point (a) of the drain and the gate of the MOSFET4. Therefore, almost a constant potential difference between the source and the drain of the FET4 can be maintained in spite of fluctuation in a power source voltage. Since the current is permitted to flow on a second MOSFET6 based on the almost constant potential difference, the current that flows on the FET6 becomes a constant current, and it is possible to obtain a constant voltage (reference voltage) with the high voltage accuracy at a load 7 by the constant current. Also, since the circuit is formed by using FETs 4 and 6, it is possible to reduce the current that flows on the substrate.
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