| 摘要 |
PURPOSE:To prevent occurrence of shorting accidents or malfunctions due to capacitive load, by forming a film, which is made of a conductive material and interrupts transmission of light, except a light-incident region of a light detective element and except upper parts of wirings above the respective elements, on an insulating film, which covers respective elements. CONSTITUTION:An Al film 8, which is thick enough to interrupt light becoming incident to a MOS transistor or a capacitor from above, is formed on regions except an upper part of a region, where a P layer 21 for a photodiode is disposed, and except upper parts of Al wirings for respective elements. Namely respective circuit compositional elements are formed inside an Si substrate 1 and on an upper region of the substrate, and an Al circuit wiring is stuck on the substrate and coated with a CVD nitriding film 7 and the Al thin film 8. This Al thin film 8 is processed by a photoetching method, and a pattern formed inversely to that used upon the processing of the Al wiring 6 is used on a region except on a light detection part. Hence, shorting accidents between the conductive film and the wiring, can be prevented from occurring, and also malfunctions due to capacitive loads formed unnecessarily by the conductive film, the insulating film, and the wiring can be prevented from occurring.
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