| 摘要 |
The charge-transfer matrix device according to the invention includes, in addition to the horizontal lines, made of polysilicon for example, at the ends of which are applied the transfer control potentials, one or more sets of additional vertical metal electrodes arranged above certain judiciously chosen vertical gates, connection points being made between these vertical electrodes and the horizontal lines raised to the same potentials, in order to reduce the constant distributed over the lines and lower the time for establishing the control potentials; this makes it possible to increase the vertical-transfer frequency. Application, in particular, to image pick-ups with frame transfer, for lowering the trailing effect. <IMAGE>
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