| 摘要 |
PURPOSE:To obtain a high reliability insulating film without lowering a capacitance of a capacitor, by forming a semiconductor device of a single layered film or laminated films whose main constituents are Si and N and by making thickness of the single layered film or the laminated films 6nm or less in SiO2 reduction. CONSTITUTION:Main constituents of a capacitor insulating film are made to be Si, N, and O. Thickness of this film is made 6nm or less in SiO2 reduction. Further the capacitor insulating film is formed of laminated films composed of an SiO2 film, an Si2N4 film, and an SiON (oxynitride) film and its thickness deff is made to be 6nm or smaller in SiO2 reduction. Namely a stacked type capacitor cell (STC) is formed and its capacitor part is an accumulation electrode 6 made of polycrystalline Si containing impurities, a capacitor insulating film 7, and a plate electrode 8 made of polycrystalline Si containing impurities. Accordingly this insulating film of high reliability can be obtained without lowering a capacitance of the capacitor. |
