| 摘要 |
PURPOSE:To control a cross-sectional shape of a resist pattern by a method wherein, after the whole surface of a resist layer has been irradiated with ultraviolet rays or far ultraviolet rays, the layer is baked in order to make a part near the surface hard to dissolve and a patterning operation is executed. CONSTITUTION:A material layer 15 to be processed is formed on a semiconductor substrate 14; a positive-type resist layer 16 is coated on the material layer 15 to be processed; after that, the whole surface is irradiated with ultraviolet rays or far ultraviolet rays 17. Then, the substrate 14 is baked in an atmosphere of ammonia gas at 80-120 deg.C; a layer 16a which is hard to dissolve with regard to a developing solution is formed on a surface region of the resist layer 18. After that, this layer is irradiated selectively with the light 16 and is exposed by using a prescribed pattern; a developing treatment is executed; an exposed part is removed; a resist pattern is obtained. By this setup, it is possible to control a cross-sectional shape of the resist pattern and to obtain the resist pattern whose crosssectional shape is optimized and whose cross-section is formed to be an overhung shape. |
