| 摘要 |
PURPOSE:To enable the removal of a negative resist without leaving residues by forming an intermediate layer consisting of a material having no reactivity with the resulted product of a thin film on the thin film and subjecting the intermediate layer and the thin film to dry etching with the negative resist as a protective film, then simultaneously removing the intermediate layer and negative resist remaining on the thin film pattern by a stripping liquid. CONSTITUTION:The intermediate layer 13 consisting of the material having no reactivity with the resulted product of the thin film 12 formed on a substrate 11 is formed on said thin film in the case of using the negative resist 14 which makes a crosslinking reaction by absorbing light energy or charge beam energy and producing the thin film pattern by working the above-mentioned thin film 12. After the intermediate layer 13 and the thin film 12 are subjected to the dry etching with the negative resist 14 as the protective film, the intermediate layer 13 and the negative resist 14 remaining on the thin film pattern are simultaneously removed by the stripping liquid. The intermediate film and negative resist film on the thin film pattern are simultaneously removed by using the stripping liquid without depending on the ashing by O2 plasma and the negative resist is removed without leaving the residues which are generated at the time of ashing on the thin film pattern. |
