| 摘要 |
PURPOSE:To display selectively etching effect by forming a clad layer, an etching stopper layer and a mesa-formed clad layer on an active layer, and growing the stopper layer and the active layer at a predetermined temperature under the condition of V/III ratio. CONSTITUTION:An (Al0.4Ga0.6)0.5In0.5P clad layer 30, a Ga0.5In0.5P active layer 10, an (Al0.4Ga0.6)0.5In0.5P clad layer 40, a Ga0.5In0.5P etching stopper layer 20, an (Al0.4Ga0.6)0.5In0.5P clad layer 50, a GaAs protective layer 80 are sequentially laminated by an MOVPE method on a GaAs substrate 100. In this case, the growing temperature of the layer 10 is 700 deg.C, V/III ratio of 400, the growing temperature of the layer 20 is 700 deg., and V/III is 60. Its band energy gap is 0.845eV and 1.896eV. Then, with an SiO2 film as a mask it is etched, a GaAs current blocking layer 70 is laminated, the mask is then removed, and a GaAs cap layer 60 is laminated. |
