| 摘要 |
PURPOSE:To enable the accurate pattern writing, by correcting the transferring amount of a material stand according to the change ratio of a field size in addition to the change of the field size, in the case of magnifying and unmagnifying a written pattern. CONSTITUTION:An electron gun and an ion source are used for a charged particle source 1 to emit a charged particle beam Bi, which is converged by electron lenses 2, 3 and two-dimensionally deflected by a deflector 4. A material 5 mounted on a material stand 6 is irradiated with the deflected beam, and a specific written pattern is obtained. A CPU 12 changes the value of an applied voltage to the deflector 4 to change finely a field size, and makes the material stand 6 transfer in accordance with the change of the field size. Thereby, even in the case where the pattern extends over a plurality of fields, the accurate pattern writing is enabled in accordance with the magnifying ratio of the written pattern, without generating junction failure of a junction part.
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