| 摘要 |
PURPOSE:To prevent an Au film thickness from being decreased by etching and to prevent a metal from being readhered on the sidewalls of the Au, by etching a plated Pt film, or intermediate layer of a semiconductor device while using a resist film as a mask, forming a polyimide film, removing the resist film and forming an Au electrode. CONSTITUTION:A semiconductor element region consisting of a base region 2 and an emitter region 3 of a semiconductor device is formed on a semiconductor substrate 1, and a Ti film 5 (lower metal layer) and a Pt film 6 (intermediate metal layer) are formed on the substrate 1 so that they serve as conducting materials during a plating process. After the formation of the films 5 and 6, a resist film 7 is formed selectively only on an electrode forming region. The film 6 masked with the resist film 7 is etched by the ion etching technique and then a polyimide film 8 is applied and baked at a predetermined temperature for providing an insulating film. A part of the surface of the film 8 is etched by a predetermined process and an Au film 9 as an upper electrode is deposited selectively on a peeled part of the exposed surface of the film 7 by means of the plating. |
