| 摘要 |
PURPOSE:To prevent a leakage current from generating between grooves, to reduce an interval between the grooves and to contract the area of a memory cell by composing newly the groove in a substrate between the cells, and burying an insulator or capacity electrode in the groove. CONSTITUTION:A thick field insulating film 2 is formed on a silicon substrate 1. Grooves are formed in the substrate of a capacity, and a capacity electrode 4 is buried therein through a capacity insulating film 3. A groove 13 is formed in the substrate between the adjacent cells, and an insulator 5 is buried in the groove. A word line 6, source, drain diffused layer 7, a gate insulating film 12 are formed adjacent to the capacity. The substance to be buried in the groove 13 uses the insulator 5 of an oxide film, or the same conductivity type impurity as that of the substrate may be doped on the substrate of the sidewall of the groove to form a capacity electrode through an insulating film in the groove. |
