| 摘要 |
PURPOSE:To perform a passivation film having high sealing capacity and less improper wirings by forming a wiring protecting insulating film of a heat resistant resin film and an inorganic insulting film deposited thereon in a semiconductor device. CONSTITUTION:A semiconductor substrate 1 is composed of a P-type silicon substrate 11 and a silicon oxide film 12 formed thereon, an N<+> type region doped on the substrate 11 by selectively opening the film 12, aluminum electrode wirings (contact electrode) 14 formed by vacuum depositing or sputtering on the region 13 and the film 12, a polyimide film 15 formed thereon, and a silicon nitride film 16 deposited by a plasma CVD method thereon, and further has a barrier metal electrode 17 so formed as to connect the electrode 14 to the openings 18 of the films 15, 16. A circuit substrate 2 has aluminum wiring electrode layer 22 formed by vacuum depositing or sputtering on an alumina substrate 21. A solder bump 3 is formed by a plating method on the electrode 17. |
