| 摘要 |
PURPOSE:To eliminate a decrease in resolution at the time of transferring charge and to improve the irregularity of charge transferring velocity by forming a first gate insulating film on a substrate formed with an impurity layer for forming a channel region in the manufacture of a charge transfer device, and further forming a second gate insulating film by a depositing method. CONSTITUTION:An N-type impurity region 2 for forming a channel region is formed on a semiconductor substrate 1 made of a P-type silicon substrate, a first gate insulating film 7 made of silicon dioxide, silicon nitride or the like is formed by a plasma CVD, polysilicon as a first gate electrode 4 is formed, the polysilicon and the film 7 are removed except a position which becomes the electrode 4, and a plurality of isolated first gate electrodes 4 are formed. A second gate insulating film 8 made of silicon dioxide or the like is again formed by a plasma CVD, polysilicon to become a second gate electrode 5 is formed, the film 8 on the electrode 4 and the polysilicon are then removed, the electrode 4 is exposed, and a plurality of the second gate electrodes 5 isolated from each other are formed.
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