| 摘要 |
PURPOSE:To eliminate the influence of the absorption of a substance by causing S- and P-polarized homogeneous light beams to make incident on a thin film on the substrate whose refractive index (n')=n(1+ik), measuring energy reflection factors to the respective incident light beams, and performing specific arithmetic operation. CONSTITUTION:The S- and P-polarized homogeneous light beams are made incident on the thin film 12 on the substrate having the known refractive index n', the energy reflection factors Rs and Rp to the incident light beams are measured, and the phase shift quantity (phip-phis)m between the P- and S-polarized light beams due to the reflection on the border surface between the surface 12 and substrate 13 is found from said measured reflected factors by assuming the refractive index nf of the thin film 12. On this other hand, a logical expression I where 2mu<2>=n<2>(1-k<2>)-nf<2>sin<2>theta1+[{n<2>(1-k<2>)-nf<2>sin<2>thetaf }<2>+4n<4>k<2>]<1/2>, and 2v<2>=-n<2>(1-k<2>)+nf<2>sin<2>thetaf+[{n<2>(1-k<2>)-nf<2>sin<2>thetaf )<2>+4n<4>k<2>]<1/2> is used to calculate (phip-phis)c from the refractive index n' by assuming the refractive index nf. Then nf when (mup-mus)m is equal to (mup-mus)c is found and determined as the refractive index of the thin film 12.
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