| 摘要 |
<p>PURPOSE:To securely correct a pixel defect regardless of the intensity and wavelength of a light used for an optical CVD method by forming an inorganic insulating film between or below reflection electrodes. CONSTITUTION:When a thin film transistor(TR) is formed, the inorganic insulating film 12 of SiO2, SiNX, etc., is formed on a source signal line 2. When a short-circuit defect 10 occurs between the source and drain terminals of the thin film TR, a signal applied to a source signal line 2 is cut off by a FF' not to flow to a reflection electrode 6a. Then the optical CVD method is employed to form a metallic thin film 11 which connects reflection electrodes 6a and 6b above the film 12. Consequently, even if an organic insulating film 9 of polyimide, etc., is decomposed with light in the ultraviolet-ray range of the optical CVD method and the film 11 is formed even inside an active matrix array, the film 12 holds the insulation from the signal line 2 and the pixel of the electrode 6a illuminates normally.</p> |
