发明名称 SUPERCONDUCTING TRANSISTOR
摘要 PURPOSE:To obtain practically sufficient characteristics by utilizing the characteristics of a ceramic superconductor thin-film. CONSTITUTION:Source-drain electrodes are arranged onto the mixed group regions 1 of electrically strongly bonded metal and ceramic superconductor, and a gate electrode is formed onto an electrically weakly bonded ceramic superconductor region 2. That is, oxide superconductor thin-films can be shaped through a sputtering method, an evaporation method, etc., but these thin-films consist of the aggregates of crystallites, and sections among crystallites are composed of electrically weakly bonded Josephson junctions. Consequently, the critical currents Jc of the oxide superconductor thin-film is reduced extremely though the oxide superconductor thin-film has a large critical magnetic field Hc. A normal metal is diffused among crystallite particles, and bonding is strengthened. Accordingly, superconductor particles separated at distances of approximately 1000Angstrom are coupled firmly by the proximity effect of superconductor-metal-superconductor, thus increasing a critical current value.
申请公布号 JPS63313877(A) 申请公布日期 1988.12.21
申请号 JP19870149049 申请日期 1987.06.17
申请人 TOSHIBA CORP 发明人 MIZUSHIMA KOICHI;YOSHIDA JIRO
分类号 H01L39/22 主分类号 H01L39/22
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