| 摘要 |
PURPOSE:To change the thickness of an epitaxial layer partially without generating the turbulence, etc., of crystallizability by alternately conducting the formation of impurity diffusion regions in high concentration and epitaxial growth minimally twice or more. CONSTITUTION:Buried diffusion layers 302 and an epitaxial layer 303 are grown onto a substrate 301, a novel buried diffusion layer 401 is shaped, and the second growth of the epitaxial layer 402 is performed. Consequently, the thickness of the epitaxial layer 402 on the diffusion layer 401 can be made thinner than other sections, thus obtaining the substrate, the thickness of the epitaxial layers of which is made to differ partially. The thickness of the epitaxial layer 303 and a thermal process are adjusted as required, thus also bringing the diffusion layer 401 and the diffusion layers under the layer 401 into contact. The formation of the buried diffusion layers and the growth of the epitaxial layers are repeated alternately twice or more, thus also acquiring the substrate partially having various epitaxial layer thickness.
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