| 摘要 |
PURPOSE:To suppress a smear generated by the fact that generated photons are flown to a vertical CCD by completely isolating a charge transfer unit from a photodiode by a trench structure. CONSTITUTION:A photoresist 2 is patterned between a photodiode and a vertical CCD, and silicon-etched to form a trench. Then, isolating P<+> type ions are implanted to a wall of trench side. Thereafter, a trench groove is buried with oxide 5. Subsequently, an epitaxial growth 6 of sufficient thickness to bury the insulator in the groove is performed. Then, a solid state image sensor is manufactured by a normal process. A smear which passes the lower section of a conventional isolating oxide film 8 can be suppressed by isolating a vertical CCD and a photodiode 10 by buried trench isolation. Since the width of a conventional isolation region is determined by the trench isolation, a solid state image sensor which has higher density than the conventional one can be obtained.
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