发明名称 SIMULTANEOUSLY MEASURING METHOD FOR IMPURITY LEVEL AND CARRIER LIFE IN SEMICONDUCTOR
摘要 PURPOSE:To simultaneously measure an impurity level and a carrier life in a semiconductor by superposing to irradiate a sample surface with a pulse light and a continuous light to generate a fluorescence, and detecting the spectral distribution of the fluorescence and photoluminescence transient responses of respective wavelengths. CONSTITUTION:An exciting light source preferably uses a continuous oscillation laser 1a and a pulse laser 1b having high light intensity and constant phase. An exciting light is condensed by in irradiation light optical system 2 to throttle a beam diameter. The condensed laser light is irradiated to the sample of a sample holder 3, the radiated light from the sample is efficiently condensed by a condensing optical system 4, and then introduced into a spectroscope 5. The introduced light is divided in the spectroscope 5, split in a half mirror, one is introduced to a photoelectron multiplier 6 and the other is introduced to a high speed photodetector 7. The detected signals are fed to a computer 8 to be data processed. The computer is also used to control experimental conditions, such as a laser light intensity, pulse light oscillation period, sample temperature and measuring wavelength.
申请公布号 JPS63312649(A) 申请公布日期 1988.12.21
申请号 JP19870147976 申请日期 1987.06.16
申请人 KAWASAKI STEEL CORP 发明人 TAKAHASHI MAKOTO;YAMADA TOSHIO
分类号 G01N21/64;H01L21/66 主分类号 G01N21/64
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