| 摘要 |
PURPOSE:To prevent the damage to the silicon surface and the exfoliation of a gate electrode due to ion implantation by a method wherein the part in which ions will be implanted is oxidized or a silicon oxide film or other insulating film is deposited on the ion-implanting part before ions are implanted. CONSTITUTION:A silicon oxide film 15 is formed by oxidizing the silicon surface of the region 16, which becomes a source and drain, before impurities are ion- implanted for the purpose of forming a source electrode and a drain electrode on both sides of a gate electrode 15 using the gate electrode 13 as a mask. The upper part of polycrystalline silicon 13 is oxidized by the above-mentioned oxidizing process, and a silicon oxide film 14 is formed. As a result, the damage generating on the silicon surface is prevented by the silicon oxide film 15 when an ion-implanting operation, in which the source and drain region 16 is formed is conducted. At the same time, the impurities ion-implanted are prevented by the silicon oxide film 14 from reaching a channel region 17 passing through the polycrystalline silicon.
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