Method for forming pattern by using graft copolymerization.

摘要

A method for forming a pattern comprises a step of irradiating a resist layer (3) applied on a substrate (4) to be worked with a radiation (1) through a mask (2) in an oxygen-containing atmosphere (5) to expose said resist layer, a step of decomposing a peroxide (7) produced within said exposed resist layer (3) in an atmosphere free from oxygen, a step of introducing a monomer (8) into said atmosphere free from oxygen to conduct graft copolymerization (9) of said resist layer (3) at the exposed portion with said monomer, and a step of developing said resist layer (3) to remove said resist layer at the portion remaining ungrafted.