Field effect transistor with short channel length and process of fabrication thereof.

摘要

For preventing a field effect transistor from the short-channel effects, there is disclosed a field effect transistor comprising a channel region (28) and source/drain regions (22 and 23) deviating form the central portion of the channel region in the lateral direction of the field effect transistor, a gate electrode (21) covered with an insulating film (27 and 28 min ) intervenes between the source/drain regions, so that the channel region is increased in length.