| 摘要 |
PURPOSE:To reduce a foreign matter and an impurity by continuously laminating a gate insulating film and gate electrode-wiring through a chemical vapor deposition method by using the same chemical vapor deposition device. CONSTITUTION:An silicon oxide film 2 is laminated onto a semiconductor substrate 1 consisting of silicon (Si), etc., by employing a chemical vapor deposition method (a CVD method), and the silicon oxide film 2 is used as a gate insulating film in metal-oxide film-semiconductor, a MOS transistor. A polycrystalline silicon film 3 is laminated by employing the chemical vapor deposition method in the same device as a device through which the silicon oxide film 2 is laminated. The polycrystalline silicon film 3 is used as a gate electrode and a wiring in the MOS transistor, and machined to a desired shape. Consequently, the semiconductor substrate is not moved, and the intrusion of an impurity and the contamination of particles, etc., is reduced extremely. Accordingly, the gate oxide film is held under a clean state at all times, thus acquiring high quality and high reliability.
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