| 摘要 |
<p>A dynamic random access memory device includes a storage capacitor (C) having a plurality of stacked conductive films (26a1, 26a2,..., 26an) which form a storage electrode (26a). A gap is formed between elevationally adjacent conductive films so as to surround the storage electrode. A gap (241) is formed between an insulating film (15) which covers a gate electrode (WL1) for insulation and a lowermost film (26a1) of the storage electrode. Connection between the adjacent films is established so that an uppermost film (362) elevationally extends so as to make contact with a drain region (13). Also, connection can be established so that an upper film (462) is mounted directly on an lower film (461). An end portion of the film is thicker than the other portion thereof. The stacked film structure may be produced by alternatively forming a film made of a material different from the insulating film covering the gate electrode, and a conductive film.</p> |
