| 摘要 |
PURPOSE:To bring a bit potential before a signal is read to 1/2 of a supply voltage to completely remove noise from an adjacent bit line by constituting a memory cell for storing one bit of two memory cell elements consisting of one transistor TR and one capacitor. CONSTITUTION:The twin cell of a semiconductor storage device is constituted of the respective TG1, TG2 of one TR and the two memory cell elements consisting of the respective capacitors C1, C2. The capacity of the capacitors is defined to be C1=C2=CS/2 and equivalent to the memory cell for storing one bit by one memory cell having the capacitor of the capacity CS. A transfer gate is formed of the respective TG1 and TG2, the gate is connected to the same word line WL, the word line WL is raised, thereby, TG1 and TG2 are simultaneously opened and the respective potentials are written in the capacitor C1 from the bit line BL and in the capacitor C2 from the bit line, the inverse of BL. |
