发明名称 DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To reduce the effect of axial hole burning by dispersing light intensity distribution concentrated to a phase discontinuous section to phase discontinuous sections in a plurality of optimized quantities at separate positions. CONSTITUTION:The title laser has an N-type InP substrate 6 to which a diffraction grating 7 is formed, an undoped GaInAsP optical waveguide layer 8 shaped to a mesa-striped shape, an active layer 9, a P-type InP clad layer 10 and a P-type GaInAsP ohmic contact layer 11 and a P-type InP layer 12, an N-type InP layer 13, and an undoped GaInAsP cap layer 14 formed on both sides of the mesa stripe. A phase discontinuous section in the diffraction grating 7 is shaped near a reflecting edge face at every size such as 30mum and 50mum from the central section of a resonator. Consequently, light intensity distribution concentrated to one phase discontinuous section is dispersed to phase discontinuous sections in a plurality of, optimized quantities at separate positions, and the distribution of the light intensity can be flattened. Accordingly, a refractive index in a section having large light intensity is reduced, thus minimizing the effect of axial hole burning.
申请公布号 JPS63313890(A) 申请公布日期 1988.12.21
申请号 JP19870150468 申请日期 1987.06.17
申请人 TOSHIBA CORP 发明人 KINOSHITA JUNICHI
分类号 H01S5/00;H01S5/12;H01S5/323 主分类号 H01S5/00
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