| 摘要 |
PURPOSE:To reduce the stress to a capacitor insulating film and to contrive the improvement of characteristics of a memory cell by a method wherein any of memory cell electrodes is used as a single crystal Si film. CONSTITUTION:Capacitor electrodes 9 and 15 connected to sources 5 and 20 of a MOS transistor formed on the main surface of an Si substrate 1 are used as single crystal Si films. The film 9, which is used as a plate electrode, does not inflict a stress on an insulating film 10, which is used as a derivative, as being formed by a solid phase epitaxial growth. That is, the characteristics of the film 8 can be maintained in the same degree as that immediately after the formation of the film 8. If a single crystal Si film grown epitaxially in solid phase using the diffused layer 5 as a seed crystal after a process, wherein a passivation film 6 is deposited, processed and thereafter, an amorphous Si film is deposited, is used as a node electrode 7 instead of the poly Si film 7, an insulating film having a breakdown strength higher compared to the breakdown strength of the film 8 formed on the film 8 can be formed. |
