| 摘要 |
PURPOSE:To enable a highly stable connection structure to be manufactured at low cost by a method wherein an electrode part composed of an aluminum layer, a bonding layer comprising a material to convert an aluminum oxide into a conductive oxide, a gold layer and a silver paste is provided on the surface of a semiconductor substrate. CONSTITUTION:An Al electrode 2, a bonding layer 3 formed on the Al 2 and Au 4 are provided on a substrate 1. By using e.g. Cr 3 as the bonding layer 3, the surface of Al 2 is protected from oxidation and simultaneously a thin oxide film is varied from the composition of AlO to AlO-Cr as a conductive oxide by the free oxide producing energy of Cr. Finally, when Au 4 is coated with silver paste, the contact resistance is not increased even if Au 4 is supplied with additional current. Through these procedures, highly reliable semiconductor device can be manufactured at low cost.
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