发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve workability without generating a crack and to contrive the realization of a high reliability and a high yield by a method wherein an exposed terminal electrode and a protrusion for joint are bonded together through a buffer metal film formed on the electrode terminal. CONSTITUTION:An Si dioxide film 12 is formed on an Si substrate 11 as an insulating layer and with an Al electrode terminal 13 provided on this, a passivation film 14 is formed on the periphery of this terminal 13. The terminal 13 and a gold protrusion for joint on the side of a lead 16, that is, a gold bump 17, are bonded together. In this bonding, a buffer metal film 21 is formed only on the terminal 13 and the terminal 13 and the bump 17 are bonded together through this film 21 by thermocompression bonding which is applied by a tool 18. Thereby, as the thermal stress and the mechanical stress at the time of bonding can be relaxed, a crack becomes hard to generate and a margin of bonding conditions can be taken widely and the realization of a high reliability and a high yield can be contrived.
申请公布号 JPS63311733(A) 申请公布日期 1988.12.20
申请号 JP19870148263 申请日期 1987.06.15
申请人 TOSHIBA CORP 发明人 OSADA OSAMU;NAKANO HIROTAKA;YOSHINO TSUNEICHI
分类号 H01L21/60 主分类号 H01L21/60
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