发明名称 SURFACE OXIDATION CARBIDE FIELD EMITTER
摘要 <p>PURPOSE:To focus an emitted electron beam into a uniform electron beam and obtain high intensity by oxidizing the surface of a field emitter made of a single crystal of transition metal carbide monocrystal. CONSTITUTION:A field emitter made of a single crystal of transition metal carbide is flash-heated to a high temperature in an extremely high vacuum to form a clean surface. Next, a sufficient quantity of oxygen gas is introduced to be saturation-absorbed on the emitter surface, which is then flash-heated to a required temperature in an extremely high vacuum. By using the field emitter made of surface oxidized transition metal carbide thus obtained, an electron beam is focused at its center portion, and the electron beam is highly intensified caused by the focusing of the electron beam and an increase of the current density due to a reduction of the work function.</p>
申请公布号 JPS5971232(A) 申请公布日期 1984.04.21
申请号 JP19820180500 申请日期 1982.10.14
申请人 KAGAKUGIJUTSUCHO MUKI ZAISHITSU KENKYUSHO (JAPAN) 发明人 ISHIZAWA YOSHIO;OOSHIMA CHIYUUHEI;OOTANI SHIGEKI;SHIBATA YUKIO
分类号 H01J1/30;C30B29/36;H01J1/304;H01J9/02 主分类号 H01J1/30
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