| 摘要 |
PURPOSE:To make it possible to discriminate immediately the shift in the X and Y directions of a first pattern by a method wherein the first resist pattern parts of the first pattern are formed in such a way that the surrounding first resist pattern parts are shifted in the inner side in the center direction by a prescribed fine size centering around the center of the first pattern. CONSTITUTION:First resist pattern parts 11 are formed in such a way that the surrounding first resist pattern parts 11 are located within the inner side in the center direction 0.1 mm by 0.1 mm, for example, centering around the center of a first pattern 10 and window parts 14 of a second pattern 10 are formed at equal intervals. Accordingly, the first pattern 10, for example, is ready-formed in a first layer and by forming the second pattern 12 in a second layer, the matching accuracy of the second layer to the first layer can be seen. In such a way, a coincidence point at some one place where the first resist pattern parts 11 of the first pattern 10 are apart from the centers of the window parts 14 of the second pattern 12 is found out and the amounts of shift in the X and Y directions of the first pattern at that time can be confirmed.
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